All MOSFET. FXN0504D Datasheet

 

FXN0504D Datasheet and Replacement


   Type Designator: FXN0504D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252
 

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FXN0504D Datasheet (PDF)

 ..1. Size:958K  cn fx-semi
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FXN0504D

FuXin Semiconductor Co., Ltd. FXN0504D Series Rev.A General Description Features The FXN0504D uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:315K  cn fx-semi
 fxn0503d.pdf pdf_icon

FXN0504D

FuXin Semiconductor Co., Ltd. FXN0503D Series Rev.A General Description Features The FXN0503D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 80A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:874K  cn fx-semi
 fxn0507c.pdf pdf_icon

FXN0504D

FuXin Semiconductor Co., Ltd.FXN0507C Series Rev.AGeneral Description FeaturesThe FXN0507C uses advanced Silicon s MOSFET Technology, whichVDS = 70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica

Datasheet: AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , RFP50N06 , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D .

Keywords - FXN0504D MOSFET datasheet

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