FXN9N50F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN9N50F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8.4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220F

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FXN9N50F datasheet

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FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:598K  cn fx-semi
 fxn9n20c.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.A General Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.3. Size:796K  cn fx-semi
 fxn9n40c.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.A General Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

MOSTRAR MÁS

Otros transistores... FXN0404C, FXN0405C, FXN0406C, FXN0205C, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, MMIS60R580P, FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C