FXN9N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

FuXin Semiconductor Co., Ltd. FXN9N45F Series Rev.A General Description Features The FXN9N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus