Справочник MOSFET. FXN9N50F

 

FXN9N50F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN9N50F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8.4 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для FXN9N50F

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN9N50F Datasheet (PDF)

 ..1. Size:464K  cn fx-semi
fxn9n50f.pdfpdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

 9.1. Size:797K  cn fx-semi
fxn9n90p.pdfpdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:598K  cn fx-semi
fxn9n20c.pdfpdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.3. Size:796K  cn fx-semi
fxn9n40c.pdfpdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Другие MOSFET... FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , AO3401 , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , FXN20N50F , FXN0704F , FXN0706C .

History: TSA3878 | STF11N65K3 | 3N70L-TM3-T | AUIRFSL3307Z | APT30M30JFLL | FDV301NNB9V005 | HGN240N15S

 

 
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