All MOSFET. FXN9N50F Datasheet

 

FXN9N50F Datasheet and Replacement


   Type Designator: FXN9N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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FXN9N50F Datasheet (PDF)

 ..1. Size:464K  cn fx-semi
 fxn9n50f.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

 9.1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:598K  cn fx-semi
 fxn9n20c.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.3. Size:796K  cn fx-semi
 fxn9n40c.pdf pdf_icon

FXN9N50F

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

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Datasheet: FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , P60NF06 , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , FXN20N50F , FXN0704F , FXN0706C .

Keywords - FXN9N50F MOSFET datasheet

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