FXN0704F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN0704F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 52 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 158 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO220F

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FXN0704F datasheet

 ..1. Size:626K  cn fx-semi
 fxn0704f.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0704F Series Rev.A General Description Features The FXN0704F uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applicat

 7.1. Size:364K  cn fx-semi
 fxn0704c.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:296K  cn fx-semi
 fxn0703d.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
 fxn0706c.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

MOSTRAR MÁS

Otros transistores... FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, IRFZ48N, FXN0706C, FXN0707C, FXN0707CN, FXN4613F, FXN4615F, FXN4620F, FXN4625F, FXN7N65F