Справочник MOSFET. FXN0704F

 

FXN0704F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN0704F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 45 nC
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 158 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для FXN0704F

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN0704F Datasheet (PDF)

 ..1. Size:626K  cn fx-semi
fxn0704f.pdfpdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd.FXN0704F Series Rev.AGeneral Description FeaturesThe FXN0704F uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applicat

 7.1. Size:364K  cn fx-semi
fxn0704c.pdfpdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:296K  cn fx-semi
fxn0703d.pdfpdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
fxn0706c.pdfpdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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