All MOSFET. FXN0704F Datasheet

 

FXN0704F Datasheet and Replacement


   Type Designator: FXN0704F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search

 

FXN0704F Datasheet (PDF)

 ..1. Size:626K  cn fx-semi
fxn0704f.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd.FXN0704F Series Rev.AGeneral Description FeaturesThe FXN0704F uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applicat

 7.1. Size:364K  cn fx-semi
fxn0704c.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:296K  cn fx-semi
fxn0703d.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
fxn0706c.pdf pdf_icon

FXN0704F

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - FXN0704F MOSFET datasheet

 FXN0704F cross reference
 FXN0704F equivalent finder
 FXN0704F lookup
 FXN0704F substitution
 FXN0704F replacement

 

 
Back to Top

 


 
.