FXN10N80F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN10N80F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 3106 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de FXN10N80F MOSFET
FXN10N80F Datasheet (PDF)
fxn10n80f.pdf

FuXin Semiconductor Co., Ltd.FXN10N80F Series Rev.AGeneral Description FeaturesThe FXN10N80F uses advanced Silicon s MOSFET Technology, whichV = 800VDSprovides high performance in on-state resistance, fast switchingID = 10A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn10n50f.pdf

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.AGeneral Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn10n65f.pdf

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 10A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
fxn10n06d.pdf

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.AGeneral Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Otros transistores... FXN4625F , FXN7N65F , FXN8N60F , FXN8N65D , FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , IRFP064N , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C .
History: ECH8655R | STV50N05



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0604AGQ | JMSL0604AG | JMSL0603PG | JMSL0603BGQ | JMSL0603BG | JMSL0603AK | JMSL0602PG | JMSL0602MG | JMSL0602AGQ | JMSL0602AG | JMSL0601TG | JMSL0601BGQ | JMSL0601BG | JMSL0601AGQ | JMSL0601AG | JMTP330N06D
Popular searches
2sd555 | a950 transistor | k2611 | c1740 transistor | c828 transistor | c4467 | c2383 transistor | 2n3055 equivalent