FXN10N80F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FXN10N80F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.4 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 3106 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO220F
Аналог (замена) для FXN10N80F
FXN10N80F Datasheet (PDF)
fxn10n80f.pdf

FuXin Semiconductor Co., Ltd.FXN10N80F Series Rev.AGeneral Description FeaturesThe FXN10N80F uses advanced Silicon s MOSFET Technology, whichV = 800VDSprovides high performance in on-state resistance, fast switchingID = 10A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn10n50f.pdf

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.AGeneral Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn10n65f.pdf

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 10A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
fxn10n06d.pdf

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.AGeneral Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Другие MOSFET... FXN4625F , FXN7N65F , FXN8N60F , FXN8N65D , FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , IRFP064N , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C .
History: IRFZ44NLPBF | CEPF640 | BUZ905X4S | FDMS3606S | CJAC10H02 | 2N6782-SM | R6006KND3
History: IRFZ44NLPBF | CEPF640 | BUZ905X4S | FDMS3606S | CJAC10H02 | 2N6782-SM | R6006KND3



Список транзисторов
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