FXN10N80F datasheet, аналоги, основные параметры

Наименование производителя: FXN10N80F  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 68 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.4 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 42 ns

Cossⓘ - Выходная емкость: 3106 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO220F

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Аналог (замена) для FXN10N80F

- подборⓘ MOSFET транзистора по параметрам

 

FXN10N80F даташит

 ..1. Size:478K  cn fx-semi
 fxn10n80f.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a

 8.1. Size:960K  cn fx-semi
 fxn10n50f.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 8.2. Size:734K  cn fx-semi
 fxn10n65f.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 8.3. Size:858K  cn fx-semi
 fxn10n06d.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.A General Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

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