All MOSFET. FXN10N80F Datasheet

 

FXN10N80F Datasheet and Replacement


   Type Designator: FXN10N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 41.5 nC
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 3106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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FXN10N80F Datasheet (PDF)

 ..1. Size:478K  cn fx-semi
 fxn10n80f.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd.FXN10N80F Series Rev.AGeneral Description FeaturesThe FXN10N80F uses advanced Silicon s MOSFET Technology, whichV = 800VDSprovides high performance in on-state resistance, fast switchingID = 10A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a

 8.1. Size:960K  cn fx-semi
 fxn10n50f.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.AGeneral Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 8.2. Size:734K  cn fx-semi
 fxn10n65f.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 10A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 8.3. Size:858K  cn fx-semi
 fxn10n06d.pdf pdf_icon

FXN10N80F

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.AGeneral Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ELM14406AA

Keywords - FXN10N80F MOSFET datasheet

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