FXN10N80F MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN10N80F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8.4 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 41.5 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 3106 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
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FXN10N80F Datasheet (PDF)
fxn10n80f.pdf
FuXin Semiconductor Co., Ltd.FXN10N80F Series Rev.AGeneral Description FeaturesThe FXN10N80F uses advanced Silicon s MOSFET Technology, whichV = 800VDSprovides high performance in on-state resistance, fast switchingID = 10A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn10n50f.pdf
FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.AGeneral Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn10n65f.pdf
FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 10A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
fxn10n06d.pdf
FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.AGeneral Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
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