FXN4611F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN4611F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

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FXN4611F datasheet

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FXN4611F

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 11A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

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 fxn4615f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 8.2. Size:1500K  cn fx-semi
 fxn4613f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i

 9.1. Size:600K  cn fx-semi
 fxn4609f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4609F Series Rev.A General Description Features The FXN4609F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

MOSTRAR MÁS

Otros transistores... FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, FXN4607F, FXN4609F, IRFB4110, FXN4628F, FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H