FXN4611F MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN4611F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220F
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FXN4611F Datasheet (PDF)
fxn4611f.pdf
FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V =10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus
fxn4615f.pdf
FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 15A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
fxn4613f.pdf
FuXin Semiconductor Co., Ltd.FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i
fxn4609f.pdf
FuXin Semiconductor Co., Ltd.FXN4609F Series Rev.AGeneral Description FeaturesThe FXN4609F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
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