All MOSFET. FXN4611F Datasheet

 

FXN4611F Datasheet and Replacement


   Type Designator: FXN4611F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220F
 

 FXN4611F substitution

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FXN4611F Datasheet (PDF)

 ..1. Size:1085K  cn fx-semi
fxn4611f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V =10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.1. Size:1122K  cn fx-semi
fxn4615f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 15A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 8.2. Size:1500K  cn fx-semi
fxn4613f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd.FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i

 9.1. Size:600K  cn fx-semi
fxn4609f.pdf pdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd.FXN4609F Series Rev.AGeneral Description FeaturesThe FXN4609F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

Datasheet: FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , IRFZ44 , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H .

History: STP7NK80Z | D7N60 | SML801R4BN | AUIRL1404ZSTRL | VSP1R4N04HS-G | NTR1P02LT1 | FDS6299S

Keywords - FXN4611F MOSFET datasheet

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