Справочник MOSFET. FXN4611F

 

FXN4611F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN4611F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8.3 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для FXN4611F

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN4611F Datasheet (PDF)

 ..1. Size:1085K  cn fx-semi
fxn4611f.pdfpdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V =10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.1. Size:1122K  cn fx-semi
fxn4615f.pdfpdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 15A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 8.2. Size:1500K  cn fx-semi
fxn4613f.pdfpdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd.FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i

 9.1. Size:600K  cn fx-semi
fxn4609f.pdfpdf_icon

FXN4611F

FuXin Semiconductor Co., Ltd.FXN4609F Series Rev.AGeneral Description FeaturesThe FXN4609F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

Другие MOSFET... FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , IRFZ44 , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H .

History: IRFP440PBF | IRFZ14S | IRFZ14PBF | JCS630FA | FMI07N50E | 2N6770JANTXV

 

 
Back to Top

 


 
.