FXN4611F - Даташиты. Аналоги. Основные параметры
Наименование производителя: FXN4611F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.3 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 95 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F
Аналог (замена) для FXN4611F
FXN4611F Datasheet (PDF)
fxn4611f.pdf

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V =10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus
fxn4615f.pdf

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 15A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
fxn4613f.pdf

FuXin Semiconductor Co., Ltd.FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i
fxn4609f.pdf

FuXin Semiconductor Co., Ltd.FXN4609F Series Rev.AGeneral Description FeaturesThe FXN4609F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
Другие MOSFET... FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , IRF640 , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H .



Список транзисторов
Обновления
MOSFET: APG60N10S | APG120N04NF | AP8G06S | AP6P04S | AP6G03S | AP65N06DF | AP65N06D | AP4957A | AP15H06S | AP10G04S | AP90N08NF | AP8P06S | AP4G02LI | AP4606B | AP3P06MI | AP2302AI
Popular searches
2sc1116a | 2sc460 | 2sc869 datasheet | k3568 datasheet | 2sb77 | ac128 transistor datasheet | c2878 transistor | 2sc732