FXN4628F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN4628F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 108 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 460 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 80 nC
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 1420 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
FXN4628F Datasheet (PDF)
fxn4628f.pdf
FuXin Semiconductor Co., Ltd.FXN4628F Series Rev.AGeneral Description FeaturesThe FXN4628F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID =28A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn4620f.pdf
FuXin Semiconductor Co., Ltd.FXN4620F Series Rev.AGeneral Description FeaturesThe FXN4620F uses advanced Silicon s MOSFET Technology, whichV =460VDSprovides high performance in on-state resistance, fast switchingID = 20A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn4625f.pdf
FuXin Semiconductor Co., Ltd.FXN4625F Series Rev.AGeneral Description FeaturesThe FXN4625F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID =25A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn4615f.pdf
FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 15A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
