FXN4628F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN4628F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 460 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 1420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO220F

  📄📄 Copiar 

 Búsqueda de reemplazo de FXN4628F MOSFET

- Selecciónⓘ de transistores por parámetros

 

FXN4628F datasheet

 ..1. Size:581K  cn fx-semi
 fxn4628f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4628F Series Rev.A General Description Features The FXN4628F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.1. Size:560K  cn fx-semi
 fxn4620f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4620F Series Rev.A General Description Features The FXN4620F uses advanced Silicon s MOSFET Technology, which V =460V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.2. Size:573K  cn fx-semi
 fxn4625f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4625F Series Rev.A General Description Features The FXN4625F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =25A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.1. Size:1122K  cn fx-semi
 fxn4615f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

MOSTRAR MÁS

Otros transistores... FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, FXN4607F, FXN4609F, FXN4611F, IRFP460, FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C