FXN4628F datasheet, аналоги, основные параметры

Наименование производителя: FXN4628F  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 108 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 460 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 38 ns

Cossⓘ - Выходная емкость: 1420 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: TO220F

  📄📄 Копировать 

Аналог (замена) для FXN4628F

- подборⓘ MOSFET транзистора по параметрам

 

FXN4628F даташит

 ..1. Size:581K  cn fx-semi
 fxn4628f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4628F Series Rev.A General Description Features The FXN4628F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.1. Size:560K  cn fx-semi
 fxn4620f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4620F Series Rev.A General Description Features The FXN4620F uses advanced Silicon s MOSFET Technology, which V =460V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.2. Size:573K  cn fx-semi
 fxn4625f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4625F Series Rev.A General Description Features The FXN4625F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =25A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.1. Size:1122K  cn fx-semi
 fxn4615f.pdf pdf_icon

FXN4628F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, FXN4607F, FXN4609F, FXN4611F, IRFP460, FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C