FXN4628F MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN4628F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 460 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220F
- MOSFET Cross-Reference Search
FXN4628F Datasheet (PDF)
fxn4628f.pdf

FuXin Semiconductor Co., Ltd.FXN4628F Series Rev.AGeneral Description FeaturesThe FXN4628F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID =28A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn4620f.pdf

FuXin Semiconductor Co., Ltd.FXN4620F Series Rev.AGeneral Description FeaturesThe FXN4620F uses advanced Silicon s MOSFET Technology, whichV =460VDSprovides high performance in on-state resistance, fast switchingID = 20A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn4625f.pdf

FuXin Semiconductor Co., Ltd.FXN4625F Series Rev.AGeneral Description FeaturesThe FXN4625F uses advanced Silicon s MOSFET Technology, whichV = 460VDSprovides high performance in on-state resistance, fast switchingID =25A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn4615f.pdf

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DSprovides high performance in on-state resistance, fast switching ID = 15A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .