FXN12S65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN12S65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FXN12S65F MOSFET
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FXN12S65F datasheet
fxn12s65f.pdf
FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.A General Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap
fxn12n65f.pdf
FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.A General Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
fxn12n60fs.pdf
FuXin Semiconductor Co., Ltd. FXN12N60FS Series Rev.A General Description Features The FXN12N60FS uses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i
Otros transistores... FXN09150C, FXN4607F, FXN4609F, FXN4611F, FXN4628F, FXN11N45F, FXN12N60FS, FXN12N65F, IRF640N, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K, FXN15N06D
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