FXN12S65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN12S65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 24.2 nC
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
FXN12S65F Datasheet (PDF)
fxn12s65f.pdf
FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.AGeneral Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap
fxn12n65f.pdf
FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.AGeneral Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
fxn12n60fs.pdf
FuXin Semiconductor Co., Ltd. FXN12N60FS Series Rev.AGeneral Description Features The FXN12N60FS uses advanced Silicon s MOSFET Technology, which V = 600V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
