FXN12S65F Datasheet and Replacement
Type Designator: FXN12S65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO220F
FXN12S65F substitution
FXN12S65F Datasheet (PDF)
fxn12s65f.pdf

FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.AGeneral Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap
fxn12n65f.pdf

FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.AGeneral Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
fxn12n60fs.pdf

FuXin Semiconductor Co., Ltd. FXN12N60FS Series Rev.AGeneral Description Features The FXN12N60FS uses advanced Silicon s MOSFET Technology, which V = 600V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i
Datasheet: FXN09150C , FXN4607F , FXN4609F , FXN4611F , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , IRF630 , FXN32N55T , FXN40N03C , FXN40N03H , FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D .
History: IPB80N06S2L-11 | SI8410DB | AP30T10GK
Keywords - FXN12S65F MOSFET datasheet
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History: IPB80N06S2L-11 | SI8410DB | AP30T10GK



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