FXN40N03H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN40N03H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO263

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FXN40N03H datasheet

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FXN40N03H

FuXin Semiconductor Co., Ltd. FXN40N03H Series Rev.A General Description Features The FXN40N03H uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industr

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FXN40N03H

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 fxn40n20c.pdf pdf_icon

FXN40N03H

FuXin Semiconductor Co., Ltd. FXN40N20C Series Rev.A General Description Features The FXN40N20C uses advanced Planar Vdmos Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applications

Otros transistores... FXN4611F, FXN4628F, FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, IRFB4227, FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K, FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F