All MOSFET. FXN40N03H Datasheet

 

FXN40N03H Datasheet and Replacement


   Type Designator: FXN40N03H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263
 

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FXN40N03H Datasheet (PDF)

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FXN40N03H

FuXin Semiconductor Co., Ltd. FXN40N03H Series Rev.A General Description Features The FXN40N03H uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industr

 6.1. Size:678K  cn fx-semi
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FXN40N03H

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 fxn40n20c.pdf pdf_icon

FXN40N03H

FuXin Semiconductor Co., Ltd.FXN40N20C Series Rev.AGeneral Description FeaturesThe FXN40N20C uses advanced Planar Vdmos Technology, whichVDS = 200Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applications

Datasheet: FXN4611F , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , IRFB4227 , FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F .

History: FTK1206 | FTK50N03D | FTK50N06P | FXN40N03C | FTK50N06D

Keywords - FXN40N03H MOSFET datasheet

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