FXN30S60T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN30S60T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 49 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 78 nS

Cossⓘ - Capacitancia de salida: 208 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO247

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FXN30S60T datasheet

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FXN30S60T

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

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FXN30S60T

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.A General Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 8.1. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30S60T

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 8.2. Size:864K  cn fx-semi
 fxn30s55f.pdf pdf_icon

FXN30S60T

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.A General Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

MOSTRAR MÁS

Otros transistores... FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K, FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F, IRF630, FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P, FXN28N50T, FXN28S50F