FXN30S60T Todos los transistores

 

FXN30S60T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FXN30S60T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 208 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO247
 

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FXN30S60T datasheet

 ..1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30S60T

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 6.1. Size:563K  cn fx-semi
 fxn30s60f.pdf pdf_icon

FXN30S60T

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.A General Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 8.1. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30S60T

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 8.2. Size:864K  cn fx-semi
 fxn30s55f.pdf pdf_icon

FXN30S60T

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.A General Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

MOSTRAR MÁS

Otros transistores... FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , IRFP250N , FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F .

 

 

 


 
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