FXN30S60T - Даташиты. Аналоги. Основные параметры
Наименование производителя: FXN30S60T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 49 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 78 ns
Cossⓘ - Выходная емкость: 208 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: TO247
Аналог (замена) для FXN30S60T
FXN30S60T Datasheet (PDF)
fxn30s60t.pdf

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
fxn30s60f.pdf

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.AGeneral Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
fxn30s55c.pdf

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn30s55f.pdf

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.AGeneral Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
Другие MOSFET... FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , STP75NF75 , FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F .
History: WMK18N70EM | FXN30S60F
History: WMK18N70EM | FXN30S60F



Список транзисторов
Обновления
MOSFET: AP3409MI | AP3407MI | AP3407AI | AP3404BI | AP3401MI | AP3401AI | AP3400MI-L | AP3400DI | AP3400CI | AP3400BI | AP3400AI | AP320N04TLG5 | AP30P10P | AP30P06D | AP30P03DF | AP13P20D
Popular searches
2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073