FXN30S60T MOSFET Datasheet: N-Ch, 600V, 24A. Full specification with pinout and replacement list

FXN30S60T Specs and Replacement

Type Designator: FXN30S60T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 208 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO247

FXN30S60T substitution

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FXN30S60T datasheet

..1. Size:901K cn fx-semi
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FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu... See More ⇒

6.1. Size:563K cn fx-semi
fxn30s60f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.A General Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu... See More ⇒

8.1. Size:787K cn fx-semi
fxn30s55c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒

8.2. Size:864K cn fx-semi
fxn30s55f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.A General Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind... See More ⇒

Detailed specifications: FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , IRFP250N , FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F .