FXN28S50F Todos los transistores

 

FXN28S50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FXN28S50F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de FXN28S50F MOSFET

   - Selección ⓘ de transistores por parámetros

 

FXN28S50F Datasheet (PDF)

 ..1. Size:686K  cn fx-semi
 fxn28s50f.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.AGeneral Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.1. Size:869K  cn fx-semi
 fxn28n50p.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.AGeneral Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.2. Size:916K  cn fx-semi
 fxn28n50f.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.AGeneral Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.3. Size:1061K  cn fx-semi
 fxn28n50t.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd.FXN28N50T Series Rev.AGeneral Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


 
.