FXN28S50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN28S50F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 49 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 74 nS
Cossⓘ - Capacitancia de salida: 72 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de FXN28S50F MOSFET
FXN28S50F Datasheet (PDF)
fxn28s50f.pdf

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.AGeneral Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn28n50p.pdf

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.AGeneral Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn28n50f.pdf

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.AGeneral Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn28n50t.pdf

FuXin Semiconductor Co., Ltd.FXN28N50T Series Rev.AGeneral Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
Otros transistores... FXN30S60T , FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , IRF4905 , FXN15N50F , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D .
History: JCS640VH | BRD65R1K0C | FDD3N50NZ | FMV05N60E | FMV06N60E | IRF1010Z | IRF100B201
History: JCS640VH | BRD65R1K0C | FDD3N50NZ | FMV05N60E | FMV06N60E | IRF1010Z | IRF100B201



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