FXN28S50F MOSFET Datasheet: N-Ch, 500V, 23A. Full specification with pinout and replacement list

FXN28S50F Specs and Replacement

Type Designator: FXN28S50F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 72 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO220F

FXN28S50F substitution

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FXN28S50F datasheet

..1. Size:686K cn fx-semi
fxn28s50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.A General Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒

9.1. Size:869K cn fx-semi
fxn28n50p.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.A General Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒

9.2. Size:916K cn fx-semi
fxn28n50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.A General Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒

9.3. Size:1061K cn fx-semi
fxn28n50t.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN28N50T Series Rev.A General Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

Detailed specifications: FXN30S60T , FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , IRF4905 , FXN15N50F , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D .