FXN28S50F datasheet, аналоги, основные параметры

Наименование производителя: FXN28S50F  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 49 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 74 ns

Cossⓘ - Выходная емкость: 72 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: TO220F

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Аналог (замена) для FXN28S50F

- подборⓘ MOSFET транзистора по параметрам

 

FXN28S50F даташит

 ..1. Size:686K  cn fx-semi
 fxn28s50f.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.A General Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.1. Size:869K  cn fx-semi
 fxn28n50p.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.A General Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.2. Size:916K  cn fx-semi
 fxn28n50f.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.A General Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.3. Size:1061K  cn fx-semi
 fxn28n50t.pdf pdf_icon

FXN28S50F

FuXin Semiconductor Co., Ltd. FXN28N50T Series Rev.A General Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

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Другие IGBT... FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P, FXN28N50T, IRFP064N, FXN15N50F, FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D