FXN30N50T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN30N50T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 320 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 108 nC
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 1420 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FXN30N50T Datasheet (PDF)
fxn30n50t.pdf
FuXin Semiconductor Co., Ltd.FXN30N50T Series Rev.AGeneral Description FeaturesThe FXN30N50T uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap
fxn30n50f.pdf
FuXin Semiconductor Co., Ltd.FXN30N50F Series Rev.AGeneral Description FeaturesThe FXN30N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap
fxn30s60t.pdf
FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
fxn30s55c.pdf
FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
