FXN30N50T Todos los transistores

 

FXN30N50T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FXN30N50T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 1420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO247
 

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FXN30N50T datasheet

 ..1. Size:624K  cn fx-semi
 fxn30n50t.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30N50T Series Rev.A General Description Features The FXN30N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

 6.1. Size:494K  cn fx-semi
 fxn30n50f.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30N50F Series Rev.A General Description Features The FXN30N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

 9.1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 9.2. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

MOSTRAR MÁS

Otros transistores... FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D , FXN30N50F , IRFP260 , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C , FXN0204CQ .

 

 

 


 
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