FXN30N50T MOSFET Datasheet: N-Ch, 500V, 26A. Full specification with pinout and replacement list

FXN30N50T Specs and Replacement

Type Designator: FXN30N50T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 1420 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO247

FXN30N50T substitution

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FXN30N50T datasheet

..1. Size:624K cn fx-semi
fxn30n50t.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN30N50T Series Rev.A General Description Features The FXN30N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap... See More ⇒

6.1. Size:494K cn fx-semi
fxn30n50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN30N50F Series Rev.A General Description Features The FXN30N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap... See More ⇒

9.1. Size:901K cn fx-semi
fxn30s60t.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu... See More ⇒

9.2. Size:787K cn fx-semi
fxn30s55c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒