FXN30N50T datasheet, аналоги, основные параметры

Наименование производителя: FXN30N50T  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 320 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 38 ns

Cossⓘ - Выходная емкость: 1420 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO247

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Аналог (замена) для FXN30N50T

- подборⓘ MOSFET транзистора по параметрам

 

FXN30N50T даташит

 ..1. Size:624K  cn fx-semi
 fxn30n50t.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30N50T Series Rev.A General Description Features The FXN30N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

 6.1. Size:494K  cn fx-semi
 fxn30n50f.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30N50F Series Rev.A General Description Features The FXN30N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

 9.1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 9.2. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30N50T

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

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Другие IGBT... FXN25S55GF, FXN28N50F, FXN28N50P, FXN28N50T, FXN28S50F, FXN15N50F, FXN2N60D, FXN30N50F, 13N50, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2, LSD07N80A-VB, FXN0204C, FXN0204CQ