FXN30N50T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FXN30N50T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 320 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 175 °C
Qg ⓘ - Общий заряд затвора: 108 nC
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 1420 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO247
Аналог (замена) для FXN30N50T
FXN30N50T Datasheet (PDF)
fxn30n50t.pdf

FuXin Semiconductor Co., Ltd.FXN30N50T Series Rev.AGeneral Description FeaturesThe FXN30N50T uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap
fxn30n50f.pdf

FuXin Semiconductor Co., Ltd.FXN30N50F Series Rev.AGeneral Description FeaturesThe FXN30N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap
fxn30s60t.pdf

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
fxn30s55c.pdf

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
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