FXN9N20C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN9N20C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 76 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 92 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO220

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FXN9N20C datasheet

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FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.A General Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:464K  cn fx-semi
 fxn9n50f.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.3. Size:796K  cn fx-semi
 fxn9n40c.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.A General Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

MOSTRAR MÁS

Otros transistores... FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2, LSD07N80A-VB, FXN0204C, FXN0204CQ, FXN100S55T, AON7506, 630, 110N04, 13N90, 14N65, 18N50D, D2N60, D4N70, D4N80