Справочник MOSFET. FXN9N20C

 

FXN9N20C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN9N20C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 76 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.2 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 92 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FXN9N20C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN9N20C Datasheet (PDF)

 ..1. Size:598K  cn fx-semi
fxn9n20c.pdfpdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:797K  cn fx-semi
fxn9n90p.pdfpdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:464K  cn fx-semi
fxn9n50f.pdfpdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

 9.3. Size:796K  cn fx-semi
fxn9n40c.pdfpdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Другие MOSFET... FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , AON7506 , 630 , 110N04 , 13N90 , 14N65 , 18N50D , D2N60 , D4N70 , D4N80 .

 

 
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