FXN9N20C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FXN9N20C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 76 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.2 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 45 nC
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 92 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
FXN9N20C Datasheet (PDF)
fxn9n20c.pdf

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn9n90p.pdf

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus
fxn9n50f.pdf

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn9n40c.pdf

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .