FXN9N20C PDF and Equivalents Search

 

FXN9N20C Specs and Replacement

Type Designator: FXN9N20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 92 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220

FXN9N20C substitution

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FXN9N20C datasheet

 ..1. Size:598K  cn fx-semi
 fxn9n20c.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.A General Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

 9.1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

 9.2. Size:464K  cn fx-semi
 fxn9n50f.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

 9.3. Size:796K  cn fx-semi
 fxn9n40c.pdf pdf_icon

FXN9N20C

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.A General Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

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Detailed specifications: FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , IRFB3607 , 630 , 110N04 , 13N90 , 14N65 , 18N50D , D2N60 , D4N70 , D4N80 .

Keywords - FXN9N20C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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