14N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

14N6514A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 14.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.62 Features Fast switching ESD impr

TK14N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14N65WTK14N65WTK14N65WTK14N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

TK14N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14N65W5TK14N65W5TK14N65W5TK14N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

F14N6514A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 14.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)

SVS14N65FJ(F)(T)(S)D2 14A, 650V MOS 21SVS14N65FJ/F/T/SD2 N MOSFET 31TO-263-2L MOS 31. 2. 3.SVS14N65FJ/

SVSP14N65FJHE2 14A, 650V MOS 2SVSP14N65FJHE2 N MOSFET MOS 1 3SVSP14N65FJHE2 /

SVSP14N65FJD (T)KD2 14A, 650V MOS 2SVSP14N65FJD/T/KD2 N MOSFET 1 MOS 123 3TO-262-3LSVSP14N65FJD/T/KD2

SVSP14N65AFJHE2 14A, 650V MOS 2SVSP14N65AFJHE2 N MOSFET MOS 1 3 SVSP14N65AFJHE2 /

SVF14N65CFJ 14A650V N SVF14N65CFJ N MOS F-CellTM VDMOS AC-DC

SVFP14N65CFJD 14A650V N 2SVFP14N65CFJD N MOS F-CellTM VDMOS 1 3

QM14N65F 1 2011-07-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14Amost of the synchronous buck converterapplications . Applications The QM14N65F meet the RoHS an

WML1 MM14N65C14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

FIR14N65FG14A, 650V N-CHANNEL MOSFET-EGENERAL DESCRIPTION PIN Connection TO-220FThe FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

SMF14N65650V N-Channnel MOSFETFeatures 14A, 650V, R =0.6@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

SED14N65GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =300m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations