14N65 datasheet, подбор замены

 ..1. Size:1288K  cn wxdh
 14n65.pdf 

14N65 14A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 14.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.6 2 Features Fast switching ESD impr

 0.1. Size:245K  toshiba
 tk14n65w.pdf 

TK14N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK14N65W TK14N65W TK14N65W TK14N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.22 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.2. Size:242K  toshiba
 tk14n65w5.pdf 

TK14N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK14N65W5 TK14N65W5 TK14N65W5 TK14N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Struc

 0.3. Size:1405K  cn wxdh
 f14n65.pdf 

F14N65 14A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 14.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

 0.4. Size:376K  silan
 svs14n65fjd2 svs14n65fd2 svs14n65td2 svs14n65sd2 svs14n65sd2tr.pdf 

SVS14N65FJ(F)(T)(S)D2 14A, 650V MOS 2 1 SVS14N65FJ/F/T/SD2 N MOSFET 3 1 TO-263-2L MOS 3 1. 2. 3. SVS14N65FJ/

 0.5. Size:318K  silan
 svsp14n65fjhe2.pdf 

 0.6. Size:376K  silan
 svsp14n65fjdd2 svsp14n65td2 svsp14n65kd2.pdf 

 0.7. Size:345K  silan
 svsp14n65afjhe2.pdf 

 0.8. Size:553K  silan
 svf14n65cfj.pdf 

 0.9. Size:320K  silan
 svfp14n65cfjd.pdf 

 0.10. Size:315K  ubiq
 qm14n65f.pdf 

QM14N65F 1 2011-07-22 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14A most of the synchronous buck converter applications . Applications The QM14N65F meet the RoHS an

 0.11. Size:672K  way-on
 wml14n65c4 wmk14n65c4 wmm14n65c4 wmn14n65c4 wmp14n65c4 wmo14n65c4.pdf 

WML1 MM14N65C 14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4

 0.12. Size:2174K  first semi
 fir14n65fg.pdf 

FIR14N65FG 14A, 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-220F The FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

 0.13. Size:467K  huake
 smf14n65.pdf 

SMF14N65 650V N-Channnel MOSFET Features 14A, 650V, R =0.6 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

 0.14. Size:337K  cn sino-ic
 sed14n65g.pdf 

SED14N65G N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =650V DS Voltage and Current Improved Shoot-Through R =300m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations

 0.15. Size:1818K  cn apm
 apj14n65f apj14n65p apj14n65t ap65r650.pdf 

APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V

 0.16. Size:1921K  cn apm
 apj14n65d ap65r650.pdf 

APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM