14N65 PDF and Equivalents Search

 

14N65 Specs and Replacement

Type Designator: 14N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 185 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO220

14N65 substitution

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14N65 datasheet

 ..1. Size:1288K  cn wxdh
14n65.pdf pdf_icon

14N65

14N65 14A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 14.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.6 2 Features Fast switching ESD impr... See More ⇒

 0.1. Size:245K  toshiba
tk14n65w.pdf pdf_icon

14N65

TK14N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK14N65W TK14N65W TK14N65W TK14N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.22 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

 0.2. Size:242K  toshiba
tk14n65w5.pdf pdf_icon

14N65

TK14N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK14N65W5 TK14N65W5 TK14N65W5 TK14N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Struc... See More ⇒

 0.3. Size:1405K  cn wxdh
f14n65.pdf pdf_icon

14N65

F14N65 14A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 14.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) ... See More ⇒

Detailed specifications: LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , FXN9N20C , 630 , 110N04 , 13N90 , NCEP15T14 , 18N50D , D2N60 , D4N70 , D4N80 , D50N06 , D5N50 , DH0159 , DH0159B .

Keywords - 14N65 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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