B4N60 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

B4N60 datasheet

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B4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 600V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.1 2 Features Fast switching ESD impro

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Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 A g Low thermal resistance RDS(ON) 2.5 s GENERAL DESCRIPTION N-channel, enh

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BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

Otros transistores... DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 , B2N65 , 60N06 , B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 , B740 .