B4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: B4N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de B4N60 MOSFET
B4N60 Datasheet (PDF)
b4n60.pdf

B4N604A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 4.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 2.12 Features Fast switching ESD impro
php4n60e phb4n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh
brb4n60.pdf

BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
Otros transistores... DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 , B2N65 , AO4468 , B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 , B740 .
History: STB5NK50ZT4 | MSAFR12N50A | SFW082N165C3 | HMS80N10AL | NCE1490 | TPP60R240M | PSMN004-55W
History: STB5NK50ZT4 | MSAFR12N50A | SFW082N165C3 | HMS80N10AL | NCE1490 | TPP60R240M | PSMN004-55W



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