B4N60 Datasheet and Replacement
Type Designator: B4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO251B
- MOSFET Cross-Reference Search
B4N60 Datasheet (PDF)
b4n60.pdf
B4N604A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 4.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 2.12 Features Fast switching ESD impro
php4n60e phb4n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh
brb4n60.pdf
BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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