B4N60 Datasheet and Replacement. Cross Reference Search

B4N60 Datasheet (PDF)

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B4N604A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 4.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 2.12 Features Fast switching ESD impro

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Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh

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BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

Datasheet: DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 , B2N65 , AO4468 , B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 , B740 .