B4N60 Specs and Replacement
Type Designator: B4N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO251
B4N60 substitution
- MOSFET ⓘ Cross-Reference Search
B4N60 datasheet
b4n60.pdf
B4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 600V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.1 2 Features Fast switching ESD impro... See More ⇒
php4n60e phb4n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 A g Low thermal resistance RDS(ON) 2.5 s GENERAL DESCRIPTION N-channel, enh... See More ⇒
brb4n60.pdf
BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency... See More ⇒
Detailed specifications: DH019N04F, DH019N04I, DH020N03, DH020N03B, DH020N03D, DH020N03E, B25N10, B2N65, 60N06, B4N65, B4N80, B50N06, B5N50, B5N65, B630, B640, B740
Keywords - B4N60 MOSFET specs
B4N60 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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