D80N06 Todos los transistores

 

D80N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: D80N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 77 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 335 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: TO252
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D80N06 Datasheet (PDF)

 ..1. Size:1315K  cn wxdh
 80n06 f80n06 i80n06 e80n06 b80n06 d80n06.pdf pdf_icon

D80N06

80N06/F80N06/I80N06/E80N06/B80N06/D80N0680A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 60VUsed advanced trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 7mDS(on) (Type)Gthe RoHS standard.1ID = 80A3 S2 Features Fast Switching High avalanche C

 0.1. Size:260K  semihow
 hrld80n06k hrlu80n06k.pdf pdf_icon

D80N06

June 2015BVDSS = 60 VRDS(on) typ HRLD80N06K / HRLU80N06K ID = 80 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD80N06K HRLU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

 0.2. Size:266K  semihow
 hrd80n06k hru80n06k.pdf pdf_icon

D80N06

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

 0.3. Size:3557K  cn puolop
 ptd80n06.pdf pdf_icon

D80N06

PTD80N0660V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D% 100 Avalanche TestedApplicationG S Power SupplyTO-252 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (TA=25

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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