D80N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D80N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 77 nC
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 335 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de D80N06 MOSFET
D80N06 Datasheet (PDF)
80n06 f80n06 i80n06 e80n06 b80n06 d80n06.pdf
80N06/F80N06/I80N06/E80N06/B80N06/D80N0680A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 60VUsed advanced trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 7mDS(on) (Type)Gthe RoHS standard.1ID = 80A3 S2 Features Fast Switching High avalanche C
hrld80n06k hrlu80n06k.pdf
June 2015BVDSS = 60 VRDS(on) typ HRLD80N06K / HRLU80N06K ID = 80 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD80N06K HRLU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
hrd80n06k hru80n06k.pdf
Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.
ptd80n06.pdf
PTD80N0660V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D% 100 Avalanche TestedApplicationG S Power SupplyTO-252 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (TA=25
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FBM85N80B | FBM85N80P | FBM80N70B | FBM80N70P | N6005D | N6005B | N6005 | IN6005 | ID120N10ZR | I80N06 | I740 | I640 | I630 | I50N06 | I25N10 | I20N50
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