D80N06 Datasheet and Replacement. Cross Reference Search

D80N06 Datasheet (PDF)

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80N06/F80N06/I80N06/E80N06/B80N06/D80N0680A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 60VUsed advanced trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 7mDS(on) (Type)Gthe RoHS standard.1ID = 80A3 S2 Features Fast Switching High avalanche C

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June 2015BVDSS = 60 VRDS(on) typ HRLD80N06K / HRLU80N06K ID = 80 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD80N06K HRLU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

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Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

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PTD80N0660V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D% 100 Avalanche TestedApplicationG S Power SupplyTO-252 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (TA=25

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .