DCC016M120G3 Todos los transistores

 

DCC016M120G3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DCC016M120G3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 556 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 22 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: TO247-4
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DCC016M120G3 Datasheet (PDF)

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 dcc016m120g3.pdf pdf_icon

DCC016M120G3

DCC016M120G31200V/16m/110A SiC MOSFETFeatures Key ParametersVDS Higher System Efficiency 1200VRDS(on)typ Reduced Cooling Requirements 16mID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching FrequencyApplications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode

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 dcc016m120g2 dccf016m120g2.pdf pdf_icon

DCC016M120G3

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ

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History: AP98T03GP

 

 
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