DCC016M120G3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DCC016M120G3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 556 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 22 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: TO247-4

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DCC016M120G3 datasheet

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 dcc016m120g3.pdf pdf_icon

DCC016M120G3

DCC016M120G3 1200V/16m /110A SiC MOSFET Features Key Parameters VDS Higher System Efficiency 1200V RDS(on)typ Reduced Cooling Requirements 16m ID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching Frequency Applications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode

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 dcc016m120g2 dccf016m120g2.pdf pdf_icon

DCC016M120G3

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ

Otros transistores... CMP3006-VB, 2N3368, 2N3369, 2N3370, DH020N03F, DH020N03I, DH020N03P, DCC016M120G2, IRF1010E, DCC020M65G2, DCC030M120G2, DCC040M65G2, DCC060M65G2, DCC075M120G2C, DCC080M120A, DCC160M120G1, DCCF016M120G2