All MOSFET. DCC016M120G3 Datasheet

 

DCC016M120G3 Datasheet and Replacement


   Type Designator: DCC016M120G3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 556 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 158 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO247-4
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DCC016M120G3 Datasheet (PDF)

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DCC016M120G3

DCC016M120G31200V/16m/110A SiC MOSFETFeatures Key ParametersVDS Higher System Efficiency 1200VRDS(on)typ Reduced Cooling Requirements 16mID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching FrequencyApplications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode

 3.1. Size:2836K  cn wxdh
 dcc016m120g2 dccf016m120g2.pdf pdf_icon

DCC016M120G3

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: OSG80R650IF | SUD50N04-37P | HUF75831SK8T | SQM25N15-52 | IRL3803LPBF

Keywords - DCC016M120G3 MOSFET datasheet

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