DCC016M120G3 Specs and Replacement

Type Designator: DCC016M120G3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 556 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO247-4

DCC016M120G3 substitution

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DCC016M120G3 datasheet

 ..1. Size:787K  cn wxdh
 dcc016m120g3.pdf pdf_icon

DCC016M120G3

DCC016M120G3 1200V/16m /110A SiC MOSFET Features Key Parameters VDS Higher System Efficiency 1200V RDS(on)typ Reduced Cooling Requirements 16m ID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching Frequency Applications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode... See More ⇒

 3.1. Size:2836K  cn wxdh
 dcc016m120g2 dccf016m120g2.pdf pdf_icon

DCC016M120G3

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ... See More ⇒

Detailed specifications: CMP3006-VB, 2N3368, 2N3369, 2N3370, DH020N03F, DH020N03I, DH020N03P, DCC016M120G2, IRF1010E, DCC020M65G2, DCC030M120G2, DCC040M65G2, DCC060M65G2, DCC075M120G2C, DCC080M120A, DCC160M120G1, DCCF016M120G2

Keywords - DCC016M120G3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.