DCC030M120G2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DCC030M120G2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 334 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 22 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.6 nS
Cossⓘ - Capacitancia de salida: 113 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
Paquete / Cubierta: TO247
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DCC030M120G2 Datasheet (PDF)
dcc030m120g2.pdf
DCC030M120G2 68A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Applic
Otros transistores... 2N3369 , 2N3370 , DH020N03F , DH020N03I , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , AON6380 , DCC040M65G2 , DCC060M65G2 , DCC075M120G2C , DCC080M120A , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 .
History: 2SK3113 | DCC060M65G2 | IPD050N03LG | HSS3401A | CSFR3N60LU | IRF2807PBF | IRFR4510PBF
History: 2SK3113 | DCC060M65G2 | IPD050N03LG | HSS3401A | CSFR3N60LU | IRF2807PBF | IRFR4510PBF
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