DCC030M120G2 Specs and Replacement

Type Designator: DCC030M120G2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 334 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.6 nS

Cossⓘ - Output Capacitance: 113 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO247

DCC030M120G2 substitution

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DCC030M120G2 datasheet

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DCC030M120G2

DCC030M120G2 68A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Applic... See More ⇒

Detailed specifications: 2N3369, 2N3370, DH020N03F, DH020N03I, DH020N03P, DCC016M120G2, DCC016M120G3, DCC020M65G2, AON6380, DCC040M65G2, DCC060M65G2, DCC075M120G2C, DCC080M120A, DCC160M120G1, DCCF016M120G2, DCCF016M120G3, DCCF020M65G2

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs