All MOSFET. DCC030M120G2 Datasheet

 

DCC030M120G2 Datasheet and Replacement


   Type Designator: DCC030M120G2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 334 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO247
 

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DCC030M120G2 Datasheet (PDF)

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DCC030M120G2

DCC030M120G2 68A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Applic

Datasheet: 2N3369 , 2N3370 , DH020N03F , DH020N03I , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , IRLZ44N , DCC040M65G2 , DCC060M65G2 , DCC075M120G2C , DCC080M120A , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 .

History: CTLM8110-M832D | HSS2306A

Keywords - DCC030M120G2 MOSFET datasheet

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