DCC075M120G2C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DCC075M120G2C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 41 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18.3 nS
Cossⓘ - Capacitancia de salida: 63 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075(typ) Ohm
Paquete / Cubierta: TO247
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DCC075M120G2C Datasheet (PDF)
dcc075m120g2c.pdf
DCC075M120G2C 40A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Appli
Otros transistores... DH020N03I , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 , NCEP15T14 , DCC080M120A , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 , DH100P40D , DH100P40E , DH100P40F .
History: UF3710 | DCC060M65G2 | HSS3401A | IRFR4510PBF | IRF2805PBF | IRF2804S-7PPBF | IPD050N03LG
History: UF3710 | DCC060M65G2 | HSS3401A | IRFR4510PBF | IRF2805PBF | IRF2804S-7PPBF | IPD050N03LG
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