DCC075M120G2C Specs and Replacement

Type Designator: DCC075M120G2C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.3 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 typ Ohm

Package: TO247

DCC075M120G2C substitution

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DCC075M120G2C datasheet

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DCC075M120G2C

DCC075M120G2C 40A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Appli... See More ⇒

Detailed specifications: DH020N03I, DH020N03P, DCC016M120G2, DCC016M120G3, DCC020M65G2, DCC030M120G2, DCC040M65G2, DCC060M65G2, NCEP15T14, DCC080M120A, DCC160M120G1, DCCF016M120G2, DCCF016M120G3, DCCF020M65G2, DH100P40D, DH100P40E, DH100P40F

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.