DCC075M120G2C Datasheet and Replacement
Type Designator: DCC075M120G2C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18.3 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075(typ) Ohm
Package: TO247
DCC075M120G2C substitution
DCC075M120G2C Datasheet (PDF)
dcc075m120g2c.pdf

DCC075M120G2C 40A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Appli
Datasheet: DH020N03I , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 , IRFP450 , DCC080M120A , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 , DH100P40D , DH100P40E , DH100P40F .
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