QN3103M6N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QN3103M6N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 46 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43 nS
Cossⓘ - Capacitancia de salida: 512 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
Paquete / Cubierta: PRPAK5X6
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QN3103M6N Datasheet (PDF)
qn3103m6n.pdf
QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet
qn3107m6n.pdf
QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet
qn3109m6n.pdf
QN3109M6NN N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee
Otros transistores... DH025N04 , DH025N04B , DH025N04D , DH025N04E , DH025N04F , DH025N04I , HY1708MF-VB , PK6H6BA , AON7506 , DH135N10P , DH140N10B , DH140N10D , DH240N06L , DH240N06LB , DH240N06LD , DH240N06LE , DH240N06LF .
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