QN3103M6N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QN3103M6N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 68 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 512 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm

Encapsulados: PRPAK5X6

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QN3103M6N datasheet

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QN3103M6N

QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet

 9.1. Size:312K  1
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QN3103M6N

QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet

 9.2. Size:259K  1
qn3109m6n.pdf pdf_icon

QN3103M6N

QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee

Otros transistores... DH025N04, DH025N04B, DH025N04D, DH025N04E, DH025N04F, DH025N04I, HY1708MF-VB, PK6H6BA, AON7506, DH135N10P, DH140N10B, DH140N10D, DH240N06L, DH240N06LB, DH240N06LD, DH240N06LE, DH240N06LF