QN3103M6N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QN3103M6N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 46 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43 nS
Cossⓘ - Capacitancia de salida: 512 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
Encapsulados: PRPAK5X6
Búsqueda de reemplazo de QN3103M6N MOSFET
- Selecciónⓘ de transistores por parámetros
QN3103M6N datasheet
qn3103m6n.pdf
QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet
qn3107m6n.pdf
QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet
qn3109m6n.pdf
QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee
Otros transistores... DH025N04, DH025N04B, DH025N04D, DH025N04E, DH025N04F, DH025N04I, HY1708MF-VB, PK6H6BA, AON7506, DH135N10P, DH140N10B, DH140N10D, DH240N06L, DH240N06LB, DH240N06LD, DH240N06LE, DH240N06LF
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