QN3103M6N - параметры транзистора MOSFET, его аналоги, datasheet

QN3103M6N Datasheet (PDF)

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QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet

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QN3109M6NN N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee

Другие MOSFET... DH025N04 , DH025N04B , DH025N04D , DH025N04E , DH025N04F , DH025N04I , HY1708MF-VB , PK6H6BA , IRFP250 , DH135N10P , DH140N10B , DH140N10D , DH240N06L , DH240N06LB , DH240N06LD , DH240N06LE , DH240N06LF .