QN3103M6N Datasheet. Specs and Replacement

Type Designator: QN3103M6N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 512 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: PRPAK5X6

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QN3103M6N datasheet

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QN3103M6N

QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet ... See More ⇒

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QN3103M6N

QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet... See More ⇒

 9.2. Size:259K  1
 qn3109m6n.pdf pdf_icon

QN3103M6N

QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee... See More ⇒

Detailed specifications: DH025N04, DH025N04B, DH025N04D, DH025N04E, DH025N04F, DH025N04I, HY1708MF-VB, PK6H6BA, AO4407A, DH135N10P, DH140N10B, DH140N10D, DH240N06L, DH240N06LB, DH240N06LD, DH240N06LE, DH240N06LF

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