FQS4901 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQS4901 datasheet

..1. Size:721K fairchild semi
fqs4901.pdf pdf_icon

May 2000 TM QFET QFET QFET QFET 400V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.45A, 400V, RDS(on) = 4.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has b

8.1. Size:1100K fairchild semi
fqs4900.pdf pdf_icon

August 2000 TM QFET QFET QFET QFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 V field effect transistors are produced using Fairchild s RDS(on) = 0.65 @ VGS = 5 V proprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) =

8.2. Size:734K fairchild semi
fqs4903.pdf pdf_icon

May 2000 TM QFET QFET QFET QFET 500V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.5 pF) This advanced technology has b

Otros transistores... FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , IRLB3034 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 .