FQS4901 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQS4901

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 0.45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 4.2 Ohm

Empaquetado / Estuche: SOIC

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FQS4901 Datasheet (PDF)

1.1. fqs4901.pdf Size:721K _fairchild_semi

May 2000 TM QFET QFET QFET QFET 400V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 0.45A, 400V, RDS(on) = 4.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has b

4.1. fqs4900.pdf Size:1100K _fairchild_semi

August 2000 TM QFET QFET QFET QFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power � N-Channel 1.3A, 60V, RDS(on) = 0.55 ? @ VGS = 10 V field effect transistors are produced using Fairchild�s RDS(on) = 0.65 ? @ VGS = 5 V proprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) = 15.5 ? @ VG

4.2. fqs4903.pdf Size:734K _fairchild_semi

May 2000 TM QFET QFET QFET QFET 500V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect � 0.37A, 500V, RDS(on) = 6.2? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. � Low Crss ( typical 4.5 pF) This advanced technology has been especiall

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