All MOSFET. FQS4901 Datasheet

 

FQS4901 Datasheet and Replacement


   Type Designator: FQS4901
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.8 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: SO-8
 

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FQS4901 Datasheet (PDF)

 ..1. Size:721K  fairchild semi
fqs4901.pdf pdf_icon

FQS4901

May 2000TMQFETQFETQFETQFET 400V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.45A, 400V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has b

 8.1. Size:1100K  fairchild semi
fqs4900.pdf pdf_icon

FQS4901

August 2000TMQFETQFETQFETQFETFQS4900Dual N & P-Channel, Logic Level MOSFETGeneral Description FeaturesThese dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 Vfield effect transistors are produced using Fairchilds RDS(on) = 0.65 @ VGS = 5 Vproprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) =

 8.2. Size:734K  fairchild semi
fqs4903.pdf pdf_icon

FQS4901

May 2000TMQFETQFETQFETQFET 500V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.5 pF)This advanced technology has b

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History: IRF624S

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