FQS4901
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQS4901
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 0.45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.8
nC
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2
Ohm
Package:
SO-8
FQS4901
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQS4901
Datasheet (PDF)
..1. Size:721K fairchild semi
fqs4901.pdf 
May 2000TMQFETQFETQFETQFET 400V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.45A, 400V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has b
8.1. Size:1100K fairchild semi
fqs4900.pdf
August 2000TMQFETQFETQFETQFETFQS4900Dual N & P-Channel, Logic Level MOSFETGeneral Description FeaturesThese dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 Vfield effect transistors are produced using Fairchilds RDS(on) = 0.65 @ VGS = 5 Vproprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) =
8.2. Size:734K fairchild semi
fqs4903.pdf
May 2000TMQFETQFETQFETQFET 500V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.5 pF)This advanced technology has b
Datasheet: FQD5N15
, FQPF8N90C
, FQPF9N25C
, FQPF9N50CF
, FQPF9N90C
, FQPF9P25
, FQS4900
, FCI25N60N
, IRFP064N
, FCP25N60N
, FQS4903
, FQT13N06
, FQT13N06L
, FQT1N60C
, HUF76413DKF085
, FQT1N80
, HUF76407DKF085
.
